Liquid-encapsulated Czochralski growth of doped gallium-antimonide semiconductor crystals using a strong steady magnetic field

M. Yang¹ - N. Ma¹ - D. F. Bliss² - J. L. Morton³

¹ Department of Mechanical and Aerospace Engineering, North Carolina State University, Campus Box 7910, Raleigh, NC 27695 USA
² Sensors Directorate, U. S. Air Force Research Laboratory, AFRL/SNHC, 80 Scott Road, Hanscom AFB, MA 01731 USA
³ Dynetics, Inc., P.O. Box 5500, Huntsville, AL 35814 USA

Abstract
During the liquid-encapsulated Czochralski (LEC) process, a single compound semiconductor crystal such as gallium-antimonide (GaSb) is grown by the solidification of an initially molten semiconductor (melt) contained in a crucible. The motion of the electrically-conducting molten semiconductor can be controlled by an externally-applied magnetic field. A steady magnetic field provides an electromagnetic stabilization of the melt motion during the LEC process. This paper presents a model for the unsteady transport of a dopant during the LEC process under a strong steady magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented. Figs 5, Refs 18.