Three-dimensional transient modeling of the melt flow in a TMF VCz system for GaAs crystal growth

B. Nacke¹ - H. Kasjanow¹ - A. Krause² - A. Muiżnieks² - F.-M. Kiessling³ - U. Rehse³ - P. Rudolph³

¹ Institute of Electrotechnology, Leibniz University Hannover, Wilhelm-Busch-Str. 4, D-30167 Hannover, Germany
² University of Latvia, 8 Zellu str., Riga, LV-1002, Latvia
³ Leibniz-Institute for Crystal growth, Max-Born-Str. 2, D-12489 Berlin, Germany

Abstract
Numerical modeling of electromagnetic, thermal and flow field is used to analyze the influence of a travelling magnetic field (TMF) applied during crystal growth of GaAs in a VCz crystal growth system. The TMF is generated by a heater-magnet module (HMM), combining the generation of heat and electromagnetic Lorentz forces. The influence of different electric as well as geometric parameters on the TMF effects have been investigated. The numerical results allow an optimal HMM design for the VCz system for growing GaAs and other semiconductor crystals. Figs 7, Refs 2.