Effect of rotating magnetic field on mass transfer during directional solidification of semiconductors

O. A. Khlybov - T. P. Lyubimova

Institute of Continuous Media Mechanics, Ural Branch of Russian Academy of Science, Perm, Russia

Abstract
The effect of rotating magnetic field on heat and mass transfer at 2'' Ga:Ge semiconductor single crystal growth by the axial heating processing method was studied. Flow patterns and dopant distributions in the melt and crystal were examined for a set of temperature profiles applied to a submerged heater and axial temperature gradients. The temperature boundary conditions applied to the submerged heater are found to pose a significant effect on mass transfer in the melt and, as a consequence, on dopant segregation in the grown crystal. It is shown that the applied rotating magnetic field of low intensity can decrease the radial dopant segregation in the grown crystal. Figs 6, Refs 13.